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The development of the latest high-power laser emitters will be carried out on a grant from the President of the Russian Federation - Shvabe

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Image source: © Фото предоставлено пресс-службой холдинга "Швабе"

Moscow. January 18. INTERFAX - A scientist at the Quantum Electronics Center of the Shvabe Holding has received a grant from the President of Russia, which will be used to develop a new generation of high-power infrared laser emitters based on nanostructures, the press service of the holding said on Tuesday.

"The grant of the President of the Russian Federation for young scientists was won by an employee of Shvabe," the message says.

Funding was provided for the implementation of the author's work of Maxim Ladugin, deputy head of the scientific and production complex of the Moscow Research Institute "Polyus" named after Stelmakh.

"The results of his research will make it possible to create the latest laser emitters operating in pulsed and continuous modes of the IR spectrum range from 750 to 1600 nm," the report says.

According to Evgeny Kuznetsov, Director General of the Polyus Research Institute, those nanomaterials for high-power lasers that are planned to be manufactured on the basis of theoretical and experimental studies will contribute to the overall modernization of the industry. "Their use is especially promising in terms of the latest information, digital, intelligent production technologies," Kuznetsov said, quoted by the Shvabe press service.

It is noted that the development and manufacture of compact laser emitters with increased power and reliability based on highly efficient nanostructures will allow creating a new class of devices for wide application. We are talking about such areas of science and technology as ultra-long-distance optical communication with high transmission speed, as well as control and tracking of safe movement of vehicles, high-precision metrology, medicine, technological processing of materials and others.

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