Войти
МИЭТ

The electron microscopy laboratory is working on optimizing the technology of growing GAN nanowires

3051
0
0
Image source: МИЭТ

Scientists The evolution of the shape of nanowires from GaN obtained by plasma-activated molecular beam epitaxy and representing an array of vertical columns on a silicon substrate was traced by the Institute of Physics and Applied Mathematics of MIET. Due to the high perfection of the crystal structure and the large specific surface area, nanowires from GaN can be used in high-efficiency LEDs, volatile compound sensors, photo-splitting of water, reduction of CO2 emissions into the atmosphere, etc.

Experimental samples of GAN nanowires were obtained in Institute of Solid-State Electronics named after Paul Drude (Germany), and their study was carried out on the Helios NanoLab650 electron-ion microscope, the Titan Themis 200 transmission electron microscope in MIET and using small-angle X-ray scattering in The European Synchrotron Radiation Center .


Employees of the Laboratory of Electron Microscopy of the Institute of FPM MIET at work

 

Employees of the Electron Microscopy laboratory of the FPM Institute prepared cross sections of nanowires at different distances from the substrate using the focused ion beam method. Electron microscopy allowed us to establish that they originally had a hexagonal cut. After the adjacent nanowires are closed, the concave sections formed in this case are overgrown and the hexagonal shape of the nanowires is restored. Analysis of their electron microscopic images with atomic resolution showed that during the growth process, GAN decomposition occurs in the region of the edges, evaporation of nitrogen atoms and the formation of a thin film of gallium atoms on the faces of nanowires. As a result of the described process, they acquire a more rounded shape.

The results obtained deepen the understanding of the mechanism of formation of GAN nanowires and are important for optimizing the technology of their cultivation. The study was performed in the framework of the state assignment MIET on the topic "Development of ideas about the processes of synthesis and properties of nanoscale materials and heterostructures for electronics and Photonics, the results have been published in the journal "Nanoscale Advances" in the article "Cross-sectional shape evolution of GaN nanowires during molecular beam epitaxy growth on Si (111)", 2022, (DOI: 10.1039/D1NA00773D ).

The rights to this material belong to МИЭТ
The material is placed by the copyright holder in the public domain
  • The news mentions
Страны
Проекты
Do you want to leave a comment? Register and/or Log in
ПОДПИСКА НА НОВОСТИ
Ежедневная рассылка новостей ВПК на электронный почтовый ящик
  • Discussion
    Update
  • 14.11 22:10
  • 5555
Without carrot and stick. Russia has deprived America of its usual levers of influence
  • 14.11 21:45
  • 4
TKMS показали, каким будет новый фрегат MEKO A-400
  • 14.11 18:35
  • 2
В США «откровенно посмеялись» над российским Су-57 с «бородавками»
  • 14.11 18:34
  • 2
  • 14.11 04:35
  • 2
Ответ на достаточно распространенное мнение, а именно: "Недостатки выдают за достоинства. Российские лампасы выдали малокомпетентные требования по сверхманевренности в ущерб не видимости, которые на Украине никак не пригодились."
  • 14.11 01:22
  • 1
  • 14.11 00:12
  • 5
Россия вернется к созданию сверхзвуковых лайнеров
  • 13.11 21:57
  • 1365
Корпорация "Иркут" до конца 2018 года поставит ВКС РФ более 30 истребителей Су-30СМ
  • 13.11 20:43
  • 3
Стармер и Макрон хотят убедить Байдена разрешить Украине удары дальнобойными ракетами по РФ - СМИ
  • 13.11 18:26
  • 2
  • 13.11 13:42
  • 1
"Рособоронэкспорт" назвал главное выигрышное отличие Су-57Э
  • 13.11 12:49
  • 0
Трамп – разрушитель, или очередное «Большое американское шоу»?
  • 13.11 10:45
  • 682
Израиль "готовился не к той войне" — и оказался уязвим перед ХАМАС
  • 13.11 01:37
  • 1
  • 12.11 12:28
  • 5
На Западе оценили самый дорогой танк армии России