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Shvabe improves photoelectronics on nanotechnology

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Image source: © Фото предоставлено пресс-службой холдинга "Швабе"

Moscow. November 22. INTERFAX - Engineers of the State Scientific Center of Russia in the field of photoelectronics of the Shvabe holding are preparing to implement projects to create products for IR technology, including on crystals with the prefix "nano", the press service of the holding reports.

"Today, this direction is being developed by the developers of the State Research Center of the Russian Federation "NPO Orion". The experiments are supported by the Russian Foundation for Basic Research (RFBR). Several solutions are being worked out, including a new scheme that amplifies the signal of scanning photodetectors for registering small-sized objects, and the cultivation of two-dimensional nanocrystals sensitive to infrared radiation," the report said on Monday.

The message quotes the words of Pavel Abramov, interim Director General of the State Research Center of the Russian Federation "NPO Orion", who noted that the possibility of using innovative materials in the creation of photosensitive elements has been actively discussed over the past decade.

"Over the past two years, fundamental changes have taken place in this area. And our engineers contribute to this common cause. Based on their research, in the foreseeable future we will be able to go far beyond the usual level of quality and reliability of photoelectronics products. We are working to make them invulnerable to any kind of fluctuations, noises and other negative external factors," Abramov said.

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